发明授权
- 专利标题： Magnetoresistive element and magnetic memory using the same
- 专利标题（中）： 磁阻元件和使用其的磁存储器
-
申请号： US13424136申请日： 2012-03-19
-
公开(公告)号： US08659103B2公开(公告)日： 2014-02-25
- 发明人: Daisuke Watanabe , Katsuya Nishiyama , Toshihiko Nagase , Koji Ueda , Tadashi Kai
- 申请人： Daisuke Watanabe , Katsuya Nishiyama , Toshihiko Nagase , Koji Ueda , Tadashi Kai
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Knobbe, Martens, Olson, and Bear, LLP
- 优先权： JP2011-148444 20110704
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; G11C11/02
摘要：
According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first, second and third magnetic material films and a nonmagnetic material film are stacked. The first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film. The second magnetic material film has a Co concentration higher than that of the first magnetic material film.
公开/授权文献
信息查询
IPC分类:
