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    Magnetoresistive element and magnetic memory using the same
    1.
    发明授权
    Magnetoresistive element and magnetic memory using the same 有权
    磁阻元件和使用其的磁存储器

    公开(公告)号：US08670268B2

    公开(公告)日：2014-03-11

    申请号：US13427732

    申请日：2012-03-22

    申请人： Toshihiko Nagase ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadashi Kai ,  Koji Ueda ,  Daisuke Watanabe

    发明人： Toshihiko Nagase ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadashi Kai ,  Koji Ueda ,  Daisuke Watanabe

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

    摘要翻译： 根据一个实施例，磁阻元件包括第一和第二磁性层和第一非磁性层。 第一磁性层具有垂直于膜平面的容易磁化的轴和可变磁化。 第二磁性层具有垂直于膜平面的容易磁化的轴和不变的磁化。 第一非磁性层设置在第一和第二磁性层之间。 第二磁性层包括第三和第四磁性层，以及形成在第三和第四磁性层之间的第二非磁性层。 第三磁性层与第一非磁性层接触，包括Co和Zr，Nb，Mo，Hf，Ta和W中的至少一种。

    Magnetoresistive element and magnetic memory using the same
    2.
    发明授权
    Magnetoresistive element and magnetic memory using the same 有权
    磁阻元件和使用其的磁存储器

    公开(公告)号：US08669628B2

    公开(公告)日：2014-03-11

    申请号：US13424072

    申请日：2012-03-19

    申请人： Koji Ueda ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Daisuke Watanabe ,  Eiji Kitagawa ,  Tadashi Kai

    发明人： Koji Ueda ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Daisuke Watanabe ,  Eiji Kitagawa ,  Tadashi Kai

    IPC分类号： H01L29/82

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.

    摘要翻译： 根据一个实施例，磁阻元件包括以下构造。 第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。 第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。 第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。 第三和第四磁性层具有与存储层的磁化反平行的磁化。 第二非磁性层位于存储和第三磁性层之间。 第三非磁性层位于参考和第四磁性层之间。 第四磁性层的厚度小于第三磁性层的厚度。

    Magnetoresistive element and magnetic memory using the same
    3.
    发明授权
    Magnetoresistive element and magnetic memory using the same 有权
    磁阻元件和使用其的磁存储器

    公开(公告)号：US08659103B2

    公开(公告)日：2014-02-25

    申请号：US13424136

    申请日：2012-03-19

    申请人： Daisuke Watanabe ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Koji Ueda ,  Tadashi Kai

    发明人： Daisuke Watanabe ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Koji Ueda ,  Tadashi Kai

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first, second and third magnetic material films and a nonmagnetic material film are stacked. The first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film. The second magnetic material film has a Co concentration higher than that of the first magnetic material film.

    摘要翻译： 根据一个实施例，磁阻元件包括以下构造。 第一磁性层具有不变的磁化。 第二磁性层具有可变磁化强度。 在第一和第二磁性层之间提供非磁性层。 第一磁性层具有堆叠第一，第二和第三磁性材料膜和非磁性材料膜的结构。 第一磁性材料膜设置成与非磁性层接触，非磁性材料膜设置成与第一磁性材料膜接触，第二磁性材料膜设置成与非磁性材料膜接触，并且第三磁性材料膜 设置成与第二磁性材料膜接触。 第二磁性材料膜的Co浓度高于第一磁性材料膜。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME
    5.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME 有权
    磁性元件和使用它的磁记忆

    公开(公告)号：US20130001713A1

    公开(公告)日：2013-01-03

    申请号：US13424072

    申请日：2012-03-19

    申请人： Koji Ueda ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Daisuke Watanabe ,  Eiji Kitagawa ,  Tadashi Kai

    发明人： Koji Ueda ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Daisuke Watanabe ,  Eiji Kitagawa ,  Tadashi Kai

    IPC分类号： H01L29/82

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.

    摘要翻译： 根据一个实施例，磁阻元件包括以下构造。 第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。 第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。 第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。 第三和第四磁性层具有与存储层的磁化反平行的磁化。 第二非磁性层位于存储和第三磁性层之间。 第三非磁性层位于参考和第四磁性层之间。 第四磁性层的厚度小于第三磁性层的厚度。

    Magnetoresistive effect element and magnetic memory
    8.
    发明授权
    Magnetoresistive effect element and magnetic memory 有权
    磁阻效应元件和磁存储器

    公开(公告)号：US08750029B2

    公开(公告)日：2014-06-10

    申请号：US13233420

    申请日：2011-09-15

    申请人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

    发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

    IPC分类号： G11C11/15 ,  H01L43/08

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.

    摘要翻译： 根据一个实施例，磁阻效应元件包括记录层，其包括对膜表面具有垂直磁各向异性的铁磁材料和磁化的可变取向，包括具有垂直磁性各向异性的铁磁材料的参考层和膜表面的不变取向 磁化，记录层和参考层之间的非磁性层，与记录层和第一底层之间的第二底层与编码层的与设置非磁性层的一侧相反的一侧的第一底层。 第二底层是包含浓度为3×1015atms / cm 2的Pd膜。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    10.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20130020659A1

    公开(公告)日：2013-01-24

    申请号：US13628724

    申请日：2012-09-27

    申请人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

    发明人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/10

    摘要： A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

    摘要翻译： 根据实施例的磁致电阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。