Invention Grant
- Patent Title: Multilayered infrared light reflective structure
- Patent Title (中): 多层红外光反射结构
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Application No.: US12976897Application Date: 2010-12-22
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Publication No.: US08659822B2Publication Date: 2014-02-25
- Inventor: Hsiang-Chuan Chen , Mei-Ching Chiang , Chin-Ching Lin , Jen-You Chu , Yi-Ping Chen , Pao-Tang Chung
- Applicant: Hsiang-Chuan Chen , Mei-Ching Chiang , Chin-Ching Lin , Jen-You Chu , Yi-Ping Chen , Pao-Tang Chung
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW99138292A 20101108
- Main IPC: G02B5/08
- IPC: G02B5/08 ; G02B5/20 ; G02B1/11
Abstract:
The invention provides a multilayered infrared light reflective structure. The multilayered infrared light reflective structure includes a transparent substrate. A doped oxide film is disposed on the transparent substrate. An oxide isolated layer is disposed on the doped oxide film, thereby allowing incident light to be incident from a top surface of the transparent substrate into the multilayered infrared light reflective structure.
Public/Granted literature
- US20120113505A1 MULTILAYERED INFRARED LIGHT REFLECTIVE STRUCTURE Public/Granted day:2012-05-10
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