Invention Grant
- Patent Title: Method of manufacturing flash memory cell
- Patent Title (中): 制造闪存单元的方法
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Application No.: US13047758Application Date: 2011-03-14
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Publication No.: US08664062B2Publication Date: 2014-03-04
- Inventor: Yung-Chang Lin , Nan-Ray Wu , Le-Tien Jung
- Applicant: Yung-Chang Lin , Nan-Ray Wu , Le-Tien Jung
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Memory Company
- Current Assignee: Taiwan Memory Company
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu; Scott Margo
- Priority: TW99109893A 20100331
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/3205 ; H01L21/76
Abstract:
A method of manufacturing a flash memory cell includes providing a substrate having a first dielectric layer formed thereon, forming a control gate on the first dielectric layer, forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the control gate, forming a second dielectric layer on the substrate at two sides of the ONO spacer, and forming a floating gate at outer sides of the ONO spacer on the second dielectric layer, respectively.
Public/Granted literature
- US20110244640A1 METHOD OF MANUFACTURING FLASH MEMORY CELL Public/Granted day:2011-10-06
Information query
IPC分类:
