发明授权
- 专利标题： Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
- 专利标题（中）： 使用场诱导反铁磁或铁磁耦合的自旋转矩传递单元结构
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申请号： US13544670申请日： 2012-07-09
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公开(公告)号： US08665640B2公开(公告)日： 2014-03-04
- 发明人: Jun Liu , Gurtej Sandhu
- 申请人： Jun Liu , Gurtej Sandhu
- 申请人地址： US ID Boise
- 专利权人： Micron Technologies, Inc.
- 当前专利权人： Micron Technologies, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Fletcher Yoder, P.C.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A magnetic memory cell including a soft magnetic layer and a coupling layer, and methods of operating the memory cell are provided. The memory cell includes a stack with a free ferromagnetic layer and a pinned ferromagnetic layer, and a soft magnetic layer and a coupling layer may also be formed as layers in the stack. The coupling layer may cause antiferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction antiparallel to the magnetization of the soft magnetic layer, or the coupling layer may cause ferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction parallel to the magnetization of the soft magnetic layer. The coupling layer, through a coupling effect, reduces the critical switching current of the memory cell.