发明授权
- 专利标题: Flash memory system that uses an interleaving scheme for increasing data transfer performance between a memory device and a controller and a method therof
- 专利标题(中): 闪存系统使用交织方案来增加存储设备和控制器之间的数据传输性能以及方法
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申请号: US12256784申请日: 2008-10-23
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公开(公告)号: US08667365B2公开(公告)日: 2014-03-04
- 发明人: Nam Phil Jo , Dong Hyuk Chae , Sung Chung Park , Dong Gu Kang
- 申请人: Nam Phil Jo , Dong Hyuk Chae , Sung Chung Park , Dong Gu Kang
- 申请人地址: KR Suwon-Si, Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si, Gyeonggi-Do
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2007-0106828 20071023
- 主分类号: G06F11/00
- IPC分类号: G06F11/00
摘要:
A memory system includes a plurality of memory devices, a controller configured to control the plurality of memory devices, and at least one channel connected between the plurality of memory devices and the controller. The at least one channel includes input/output data lines and control signal lines, which are connected with the plurality of memory devices, and chip enable signal lines respectively connected to each of the plurality of memory devices, wherein the chip enable signal lines enable the plurality of memory devices independently. The controller sends a read command or a program command to one of the plurality of memory devices, and while the one of the plurality of memory devices is performing an internal read operation in response to the read command, the controller reads data from another one of the plurality of memory devices, or while the one of the plurality of memory devices is performing an internal program operation in response to the program command, the controller programs data to another one of the plurality of memory devices.
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