发明授权
US08667440B2 TCAD emulation calibration method of SOI field effect transistor
失效
SOI场效应晶体管的TCAD仿真校准方法
- 专利标题： TCAD emulation calibration method of SOI field effect transistor
- 专利标题（中）： SOI场效应晶体管的TCAD仿真校准方法
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申请号： US13696401申请日： 2011-09-23
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公开(公告)号： US08667440B2公开(公告)日： 2014-03-04
- 发明人: Zhan Chai , Jing Chen , Jiexin Luo , Qingqing Wu , Xi Wang
- 申请人： Zhan Chai , Jing Chen , Jiexin Luo , Qingqing Wu , Xi Wang
- 申请人地址： CN Changning District, Shanghai
- 专利权人： Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- 当前专利权人： Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- 当前专利权人地址： CN Changning District, Shanghai
- 代理机构： Global IP Services
- 代理商 Tianhua Gu
- 国际申请： PCT/CN2011/080076 WO 20110923
- 国际公布： WO2012/149766 WO 20121108
- 主分类号： G06F9/455
- IPC分类号： G06F9/455 ; G06F17/50
摘要：
A calibration method for a device using TCAD to emulation SOI field effect transistor, where process emulation MOS device structures with different channel lengths Lgate are obtained by establishing a TCAD process emulation program; the process emulation MOS device structures are calibrated according to a TEM test result, a SIMS test result, a CV test result, a WAT test result, and a square resistance test result of an actual device, so as to complete TCAD emulation calibration of key electrical parameters of an SOI field effect transistor. Thereby, providing effective guidance for research, development and optimization of a new process flow are realized.
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