发明授权
- 专利标题： Transistor including insertion layer and channel layer with different work functions and method of manufacturing the same
- 专利标题（中）： 晶体管包括具有不同功函数的插入层和沟道层及其制造方法
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申请号： US12289252申请日： 2008-10-23
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公开(公告)号： US08669551B2公开(公告)日： 2014-03-11
- 发明人: Sun-il Kim , Young-soo Park , I-hun Song , Chang-jung Kim , Jae-chul Park , Sang-wook Kim
- 申请人： Sun-il Kim , Young-soo Park , I-hun Song , Chang-jung Kim , Jae-chul Park , Sang-wook Kim
- 申请人地址： unknown Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： unknown Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2008-0021567 20080307
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/12
摘要：
A transistor according to example embodiments may include a channel layer, a source and a drain respectively contacting ends of the channel layer, a gate electrode separated from the channel layer, a gate insulating layer interposed between the channel layer and the gate electrode, and/or an insertion layer that is formed between the channel layer and the gate insulating layer. The insertion layer may have a work function different from that of the channel layer.
公开/授权文献
- US20090224238A1 Transistor and method of manufacturing the same 公开/授权日：2009-09-10
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