Invention Grant
- Patent Title: Method for design and manufacturing of a 3D semiconductor device
- Patent Title (中): 3D半导体器件的设计和制造方法
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Application No.: US13098997Application Date: 2011-05-02
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Publication No.: US08669778B1Publication Date: 2014-03-11
- Inventor: Zvi Or-Bach , Zeev Wurman
- Applicant: Zvi Or-Bach , Zeev Wurman
- Applicant Address: US CA San Jose
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US CA San Jose
- Agency: Tran & Associates
- Main IPC: G06F7/38
- IPC: G06F7/38 ; G06F17/50

Abstract:
A method for the design and manufacturing of a 3D semiconductor device including a first circuit stratum and a second circuit stratum, the method including: applying a synthesis tool with at least first and second technology libraries; and performing a synthesis that utilizes the at least first and second technology libraries, where the first and second technology libraries correspond to two different processes, where the first technology library targets the first circuit stratum and the second technology library targets the second circuit stratum, and where the performing a synthesis results in a netlist, the netlist includes first cells of the first technology library and second cells of the second technology library.
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