Invention Grant
US08673664B2 Method of manufacturing photodiode with waveguide structure and photodiode
有权
制造具有波导结构和光电二极管的光电二极管的方法
- Patent Title: Method of manufacturing photodiode with waveguide structure and photodiode
- Patent Title (中): 制造具有波导结构和光电二极管的光电二极管的方法
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Application No.: US13534057Application Date: 2012-06-27
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Publication No.: US08673664B2Publication Date: 2014-03-18
- Inventor: Hideki Yagi
- Applicant: Hideki Yagi
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2011-147654 20110701
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A process to form a photodiode (PD) with the waveguide structure is disclosed. The PD processes thereby reduces a scattering of the parasitic resistance thereof. The process includes steps to form a PD mesa stripe, to bury the PD mesa stripe by the waveguide region, to etch the PD mesa stripe and the waveguide region to form the waveguide mesa stripe. In the etching, the lower contact layer plays a role of the etching stopper.
Public/Granted literature
- US20130001643A1 METHOD OF MANUFACTURING PHOTODIODE WITH WAVEGUIDE STRUCTURE AND PHOTODIODE Public/Granted day:2013-01-03
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