Abstract:
The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using the mask, the semiconductor layer on the substrate is dry-etched to form a periodic structure with grooves and mesas. The active regions are buried within the grooves by the OMVPE method.
Abstract:
As a composite laser rod capable of satisfying the positional stability and output stability of a laser beam, a laser rod in which a laser active element is doped is intimately inserted into a hollow portion of a non-doped ceramic pipe that has a crystal structure the same as the laser rod followed by baking so as to remove a gap and strain at an interface between the laser rod and the ceramic pipe after the baking further followed by polishing a surface of the ceramic pipe to form a ceramic skin layer, and thereby a composite laser rod is formed. In the composite laser rod, an influence due to fluctuation in the cooling capacity of cooling water or a heat sink is averaged by a non-doped skin layer, temperature fluctuation of the laser rod is suppressed, and an influence of vibration from the cooling water or a cooling fan can be suppressed. When the refractive index of the laser rod is made higher than that of the ceramic pipe, a high efficiency oscillation can be realized, and furthermore when the thermal conductivity of the ceramic pipe is made higher than that of the laser rod, the thermal lens effect can be alleviated.
Abstract:
The present invention provides a lutetium oxide sinter to which yttrium is added in an amount of 100 mass ppm to 7000 mass ppm, whose average particle size is from 0.7 to 20 μm, and with which there is no precipitation of a hetero phase containing yttrium at the grain boundary.
Abstract:
The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using the mask, the semiconductor layer on the substrate is dry-etched to form a periodic structure with grooves and mesas. The active regions are buried within the grooves by the OMVPE method.
Abstract:
There is provided a selective serotonin reuptake inhibitor having affinity for serotonin 1A receptors which comprises a cyclic amine represented by the formula: wherein G represents a formula (2): a prodrug of said cyclic amine, or a pharmaceutically acceptable salt of said cyclic amine or prodrug, as an active ingredient.
Abstract:
Naphthyridine derivative of the formula: ##STR1## wherein Ring A is substituted or unsubstituted pyridine, X is --N(R.sup.2)--CO--(R.sup.2 is H, alkyl, substituted alkyl, etc.), Z is a direct bond, --NH--, C.sub.1 -C.sub.2 alkylene, or --CH.dbd.CH--, Y is alkyl, substituted alkyl, aromatic group or substituted aromatic group, etc., B is alkyl, substituted alkyl, aromatic group or substituted aromatic group, or an acid addition salt thereof, these compounds having acyl-CoA: cholesterol acyl transferase inhibitory activity, and being useful as an agent for prophylaxis or treatment of hyperlipidemia, atherosclerosis, and related diseases thereof.
Abstract:
Prefilled syringe for injection of two liquids includes a syringe body with an injection port at a closed end thereof, first and second gaskets fluid-tightly fitted into the syringe body to separate two medical solutions filled therein, and a closing member for closing the injection port. The syringe body is provided with bypassing grooves extending in the longitudinal direction of the syringe from a position adjacent to the closed end thereof. Liquid communication means is provided between the closed end and the first gasket. By pushing a plunger, the first and second gaskets are forced to move forward so that two medical solutions are injected one after another.
Abstract:
A multi-channel optical waveguide receiver includes an optical input port; an optical branching unit; light-receiving elements having bias electrodes and signal electrodes; optical waveguides being optically coupled between the optical branching unit and the light-receiving elements; capacitors electrically connected between the bias electrodes and a reference potential, the capacitors and the bias electrodes being connected through interconnection patterns; and a signal amplifier including input electrodes. The optical branching unit, the light-receiving elements, the optical waveguides, and the capacitors are formed on a single substrate, the substrate having an edge extending in a first direction. The signal amplifier and the substrate are arranged in a second direction crossing the first direction. The input electrodes and the signal electrodes are arranged along the edge of the substrate. Each of the signal electrodes of the light-receiving elements is electrically connected through a bonding wire to the input electrode.
Abstract:
An LD with an improved heat dissipating function in the edge regions is disclosed. The LD provides the core region including the active layer and extending whole of the substrate, and the ridge waveguide structure on the core region that extends in a direction along which the light generated in the active layer is guided. The ridge waveguide structure is buried by a thick resin layer in both sides thereof, but the resin layer is removed in the edge regions close to respective facets of the LD.
Abstract:
A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF4 and O2, where CF4 has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF4 and O2, where CF4 in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF4 and O2, where CF4 in this step has the third partial pressure greater than the second partial pressure.