Invention Grant
- Patent Title: Graphene field effect transistor
- Patent Title (中): 石墨烯场效应晶体管
-
Application No.: US13492131Application Date: 2012-06-08
-
Publication No.: US08673683B2Publication Date: 2014-03-18
- Inventor: James W. Adkisson , Thomas J. Dunbar , Jeffrey P. Gambino , Molly J. Leitch , Edward J. Nowak
- Applicant: James W. Adkisson , Thomas J. Dunbar , Jeffrey P. Gambino , Molly J. Leitch , Edward J. Nowak
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Michael LeStrange
- Main IPC: H01L51/40
- IPC: H01L51/40 ; H01L21/8232 ; H01L21/336
Abstract:
Manufacturing a semiconductor structure including: forming a seed material on an insulator layer; forming a graphene field effect transistor (FET) on the seed material; and forming an air gap under the graphene FET by removing the seed material.
Public/Granted literature
- US20130146847A1 GRAPHENE FIELD EFFECT TRANSISTOR Public/Granted day:2013-06-13
Information query
IPC分类:
