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US08674283B2 Image sensor with reduced optical crosstalk 有权
具有减少光学串扰的图像传感器

Image sensor with reduced optical crosstalk
Abstract:
A method of fabricating an image sensor includes the steps of: forming at least two photosites in a semiconductor substrate; forming a trench between the photosites; forming a thin liner on at least the sidewalls of the trench; depositing a conductive material having a first refractive index in the trench; and forming a region surrounded by the conductive material and having a second refractive index lower than the first index of refraction within the conductive material in the trench.
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