公开(公告)号：US09299865B2

公开(公告)日：2016-03-29

申请号：US14464898

申请日：2014-08-21

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Michel Marty ,  Laurent Frey ,  Sebastien Jouan ,  Salim Boutami

IPC: H01L29/06 ,  H01L31/062 ,  H01L27/14 ,  H01L31/107 ,  H01L31/0352 ,  G01T1/24 ,  H01L31/0232 ,  H01L27/146

CPC classification number: H01L31/035236 ,  G01T1/248 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/107

Abstract: A SPAD-type photodiode has a semiconductor substrate with a light-receiving surface. A lattice formed of interlaced strips made of a first material covers the light receiving surface. The lattice includes lattice openings with lateral walls covered by a spacer made of a second material. Then first and second materials have different optical indices, and further each optical index is less than or equal to the substrate optical index. A pitch of the lattice is of the order of a magnitude of an operating wavelength of the photodiode. The first and second materials are transparent at that operating wavelength. The lattice is made of a conductive material electrically coupled to an electrical connection node (for example, a bias voltage node).

Abstract translation: SPAD型光电二极管具有具有受光面的半导体基板。 由第一材料制成的交错条形成的格子覆盖光接收表面。 格子包括具有被由第二材料制成的间隔物覆盖的侧壁的格子开口。 然后第一和第二材料具有不同的光学指数，并且每个光学指数还小于或等于基底光学指数。 晶格的间距是光电二极管的工作波长大小的数量级。 第一和第二材料在该工作波长下是透明的。 晶格由电耦合到电连接节点（例如，偏压节点）的导电材料制成。