发明授权
- 专利标题： HEMT with integrated low forward bias diode
- 专利标题（中）： 集成低正向偏置二极管的HEMT
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申请号： US13213351申请日： 2011-08-19
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公开(公告)号： US08674372B2公开(公告)日： 2014-03-18
- 发明人: Gilberto Curatola , Oliver Häberlen
- 申请人： Gilberto Curatola , Oliver Häberlen
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L21/338
摘要：
A high electron mobility transistor includes a source, gate and drain, a first III-V semiconductor region having a two-dimensional electron gas (2DEG) which provides a first conductive channel controllable by the gate between the source and drain, and a second III-V semiconductor region below the first III-V semiconductor region and having a second conductive channel connected to the source or drain and not controllable by the gate. The first and second III-V semiconductor regions are spaced apart from one another by a region of the high electron mobility transistor having a different band gap than the first and second III-V semiconductor regions.
公开/授权文献
- US20130043484A1 HEMT WITH INTEGRATED LOW FORWARD BIAS DIODE 公开/授权日：2013-02-21
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