发明授权
- 专利标题： Method of manufacturing metal silicide and semiconductor structure using the same
- 专利标题（中）： 使用其制造金属硅化物和半导体结构的方法
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申请号： US13413951申请日： 2012-03-07
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公开(公告)号： US08674410B2公开(公告)日： 2014-03-18
- 发明人: Yen-Hao Shih , Ying-Tso Chen , Shih-Chang Tsai , Chun-Fu Chen
- 申请人： Yen-Hao Shih , Ying-Tso Chen , Shih-Chang Tsai , Chun-Fu Chen
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： H01L27/118
- IPC分类号： H01L27/118 ; H01L29/78 ; H01L21/44 ; H01L21/302 ; H01L21/461
摘要：
A method of manufacturing a metal silicide is disclosed below. A substrate having a first region and a second region is proviced. A silicon layer is formed on the substrate. A planarization process is performed to make the silicon layer having a planar surface. A part of the silicon layer is removed to form a plurality of first gates on the first region and to form a plurality of second gates on the second region. The height of the first gates is greater than the height of the second gates, and top surfaces of the first gates and the second gates have the same height level. A dielectric layer covering the first gates and the second gates is formed and exposes the top surfaces of the first gates and the second gates. A metal silicide is formed on the top surfaces of the first gates and the second gates.
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