Semiconductor devices including buried gate electrodes and methods of forming semiconductor devices including buried gate electrodes

发明授权

US08674420B2 Semiconductor devices including buried gate electrodes and methods of forming semiconductor devices including buried gate electrodes 有权

标题翻译：包括掩埋栅电极的半导体器件和形成包括掩埋栅电极的半导体器件的方法

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专利标题： Semiconductor devices including buried gate electrodes and methods of forming semiconductor devices including buried gate electrodes
专利标题（中）： 包括掩埋栅电极的半导体器件和形成包括掩埋栅电极的半导体器件的方法
申请号： US12588111

申请日： 2009-10-05
公开(公告)号： US08674420B2

公开(公告)日： 2014-03-18
发明人: Kye-Hee Yeom
申请人： Kye-Hee Yeom
申请人地址： KR Suwon-si, Gyeonggi-do
专利权人： Samsung Electronics Co., Ltd.
当前专利权人： Samsung Electronics Co., Ltd.
当前专利权人地址： KR Suwon-si, Gyeonggi-do
代理机构： Lee & Morse, P.C.
优先权： KR10-2008-0097615 20081006
主分类号： H01L21/8242
IPC分类号： H01L21/8242 ; H01L27/108

Semiconductor devices including buried gate electrodes and methods of forming semiconductor devices including buried gate electrodes

摘要：

A semiconductor device, including a semiconductor substrate including isolations defining active regions of the semiconductor substrate, a plurality of buried gate electrodes extending below an upper surface of the semiconductor device, and a plurality of bit lines extending along a first direction over the semiconductor substrate, wherein the plurality of bit lines are connected to corresponding ones of the active regions of the semiconductor substrate, and at least a portion of the bit lines extend along a same and/or substantially same plane as an upper surface of the corresponding active region to which it is connected.

摘要（中）：

一种半导体器件，包括：半导体衬底，包括限定半导体衬底的有源区的隔离;在半导体器件的上表面下方延伸的多个掩埋栅电极;以及沿半导体衬底上的第一方向延伸的多个位线; 其中所述多个位线连接到所述半导体衬底的相应的有源区，并且所述位线的至少一部分沿着与所述对应有源区的上表面相同和/或基本相同的平面延伸，它是连接的。

公开/授权文献

US20100085800A1 Semiconductor devices including buried gate electrodes and methods of forming semiconductor devices including buried gate electrodes 公开/授权日：2010-04-08

信息查询

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）