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Invention Grant
US08674423B2 Semiconductor structure having vias and high density capacitors 有权
具有通孔和高密度电容器的半导体结构

Semiconductor structure having vias and high density capacitors
Abstract:
A method of making a semiconductor structure includes forming at least a first trench and a second trench having different depths in a substrate, forming a capacitor in the first trench, and forming a via in the second trench. A semiconductor structure includes a capacitor arranged in a first trench formed in a substrate and a via arranged in a second trench formed in the substrate. The first and second trenches have different depths in the substrate.
Abstract(Chinese):

制造半导体结构的方法包括在衬底中形成至少具有不同深度的第一沟槽和第二沟槽，在第一沟槽中形成电容器，并在第二沟槽中形成通孔。 半导体结构包括布置在形成在衬底中的第一沟槽中的电容器和布置在形成于衬底中的第二沟槽中的通孔。 第一和第二沟槽在衬底中具有不同的深度。

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