发明授权
- 专利标题： Nonvolatile semiconductor storage device
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US13428111申请日： 2012-03-23
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公开(公告)号： US08674430B2公开(公告)日： 2014-03-18
- 发明人: Naoki Yasuda , Masaru Kito
- 申请人： Naoki Yasuda , Masaru Kito
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-195846 20110908
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
According to one embodiment, a control gate is formed on the semiconductor substrate and includes a cylindrical through hole. A block insulating film, a charge storage film, a tunnel insulating film, and a semiconductor layer are formed on a side surface of the control gate inside the through hole. The tunnel insulating film comprises a first insulating film having SiO2 as a base material and containing an element that lowers a band gap of the base material by being added. A density and a density gradient of the element monotonously increase from the semiconductor layer toward the charge storage film.
公开/授权文献
- US20130062685A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 公开/授权日：2013-03-14
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