公开(公告)号：US08846148B2

公开(公告)日：2014-09-30

申请号：US12084568

申请日：2006-11-15

申请人： Teruhiko Kumada ,  Hideharu Nobutoki ,  Naoki Yasuda ,  Tetsuya Yamamoto ,  Yasutaka Nakatani ,  Takuya Kamiyama

发明人： Teruhiko Kumada ,  Hideharu Nobutoki ,  Naoki Yasuda ,  Tetsuya Yamamoto ,  Yasutaka Nakatani ,  Takuya Kamiyama

IPC分类号： C23C16/00 ,  C07F5/02 ,  C23C16/30 ,  H01L21/314 ,  C23C16/34 ,  H01L21/318

CPC分类号： C23C16/342 ,  C07F5/02 ,  C23C16/30 ,  H01L21/314 ,  H01L21/318

摘要： A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group.

摘要翻译： 一种用于化学气相沉积膜形成的组合物，其包含由化学式1表示的环硼氮烷化合物，其满足组合物中每个卤素原子的含量为100ppb以下的条件中的至少一种或每种金属元素的含量 组合物为100ppb以下。 在化学式1中，R 1可以相同或不同，为氢原子，烷基，链烯基或炔基，其中至少一个为氢原子; R2可以相同或不同，为氢原子，烷基，烯基或炔基，其中至少一个为烷基，烯基或炔基。

公开(公告)号：US08723248B2

公开(公告)日：2014-05-13

申请号：US13404073

申请日：2012-02-24

申请人： Naoki Yasuda ,  Jun Fujiki

发明人： Naoki Yasuda ,  Jun Fujiki

IPC分类号： H01L21/28 ,  H01L27/115 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L21/28282 ,  H01L27/1157 ,  H01L29/66833 ,  H01L29/792

摘要： In one embodiment, there is provided a nonvolatile semiconductor storage device. The device includes: a plurality of nonvolatile memory cells. Each of the nonvolatile memory cells includes: a first semiconductor layer including a first source region, a first drain region, and a first channel region; a block insulating film formed on the first channel region; a charge storage layer formed on the block insulating film; a tunnel insulating film formed on the charge storage layer; a second semiconductor layer formed on the tunnel insulating film and including a second source region, a second drain region, and a second channel region. The second channel region is formed on the tunnel insulating film such that the tunnel insulating film is located between the second source region and the second drain region. A dopant impurity concentration of the first channel region is higher than that of the second channel region.

摘要翻译： 在一个实施例中，提供了一种非易失性半导体存储装置。 该装置包括：多个非易失性存储单元。 每个非易失性存储单元包括：第一半导体层，包括第一源极区，第一漏极区和第一沟道区; 形成在所述第一沟道区上的块绝缘膜; 形成在所述块绝缘膜上的电荷存储层; 形成在电荷存储层上的隧道绝缘膜; 形成在所述隧道绝缘膜上并且包括第二源极区域，第二漏极区域和第二沟道区域的第二半导体层。 第二沟道区形成在隧道绝缘膜上，使得隧道绝缘膜位于第二源区和第二漏区之间。 第一沟道区的掺杂剂杂质浓度高于第二沟道区的掺杂剂杂质浓度。

公开(公告)号：US08674430B2

公开(公告)日：2014-03-18

申请号：US13428111

申请日：2012-03-23

申请人： Naoki Yasuda ,  Masaru Kito

发明人： Naoki Yasuda ,  Masaru Kito

IPC分类号： H01L29/792

CPC分类号： H01L27/1157 ,  H01L21/28282 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792 ,  H01L29/7926

摘要： According to one embodiment, a control gate is formed on the semiconductor substrate and includes a cylindrical through hole. A block insulating film, a charge storage film, a tunnel insulating film, and a semiconductor layer are formed on a side surface of the control gate inside the through hole. The tunnel insulating film comprises a first insulating film having SiO2 as a base material and containing an element that lowers a band gap of the base material by being added. A density and a density gradient of the element monotonously increase from the semiconductor layer toward the charge storage film.

摘要翻译： 根据一个实施例，控制栅极形成在半导体衬底上并且包括圆柱形通孔。 在通孔内的控制栅极的侧表面上形成块绝缘膜，电荷存储膜，隧道绝缘膜和半导体层。 隧道绝缘膜包括具有SiO 2作为基材的第一绝缘膜，并且包含通过添加来降低基材的带隙的元素。 元素的密度和密度梯度从半导体层向电荷存储膜单调增加。

公开(公告)号：US08674046B2

公开(公告)日：2014-03-18

申请号：US12558810

申请日：2009-09-14

申请人： Hideharu Nobutoki ,  Teruhiko Kumada ,  Toshiyuki Toyoshima ,  Naoki Yasuda ,  Suguru Nagae

发明人： Hideharu Nobutoki ,  Teruhiko Kumada ,  Toshiyuki Toyoshima ,  Naoki Yasuda ,  Suguru Nagae

IPC分类号： C08G79/08 ,  C08G73/06 ,  C08G79/00 ,  C08G73/00

CPC分类号： H01L21/02118 ,  H01L21/02164 ,  H01L21/312 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L29/51 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  H01L2924/00

摘要： A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein R1 to R6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), and at least one of R1 to R6 is not hydrogen atom.

摘要翻译： 通过热处理式（1-2）的环硼氮烷化合物获得的具有优异耐水性的低介电常数材料或具有衍生自环硼氮烷化合物（1-2）的基团的无机或有机化合物进行缩合 反应，由此制备低聚物或聚合物，其中R 1至R 6独立地为氢原子，具有1至20个碳原子的烷基，芳基，取代的芳基，烯基，氨基，烷基氨基， 烷氧基，硫代烷氧基，羰基，甲硅烷基，烷基甲硅烷基，膦基，烷基膦基或下式的基团：Si（OR7）（OR8）（OR9），和至少一个 的R 1至R 6不是氢原子。

公开(公告)号：US20130234222A1

公开(公告)日：2013-09-12

申请号：US13598748

申请日：2012-08-30

申请人： Naoki YASUDA ,  Masaaki Higuchi ,  Katsuyuki Sekine ,  Masao Shingu

发明人： Naoki YASUDA ,  Masaaki Higuchi ,  Katsuyuki Sekine ,  Masao Shingu

IPC分类号： H01L29/78

CPC分类号： H01L27/11582 ,  G11C16/0483

摘要： A semiconductor memory device includes a substrate, a structure body, a semiconductor layer, and a memory film. The memory film is provided between the semiconductor layer and the plurality of electrode films. The memory film includes a charge storage film, a block film, and a tunnel film. The block film is provided between the charge storage film and the plurality of electrode films. The tunnel film is provided between the charge storage film and the semiconductor layer. The tunnel film includes a first film containing silicon oxide, a second film containing silicon oxide, and a third film provided between the first film and the second film and containing silicon oxynitride. When a composition of the silicon oxynitride contained in the third film is expressed by a ratio x of silicon oxide and a ratio (1−x) of silicon nitride, 0.5≦x

摘要翻译： 半导体存储器件包括衬底，结构体，半导体层和存储膜。 存储膜设置在半导体层和多个电极膜之间。 存储膜包括电荷存储膜，块膜和隧道膜。 阻挡膜设置在电荷存储膜和多个电极膜之间。 隧道膜设置在电荷存储膜和半导体层之间。 隧道膜包括含有氧化硅的第一膜，含有氧化硅的第二膜和设置在第一膜和第二膜之间并含有氮氧化硅的第三膜。 当第三膜中所含的氮氧化硅的组成由氧化硅的比率x和氮化硅的比例（1-x）表示时，0.5×x≤1。

公开(公告)号：US20130160711A1

公开(公告)日：2013-06-27

申请号：US13772795

申请日：2013-02-21

申请人： Teruhiko KUMADA ,  Hideharu Nobutoki ,  Naoki Yasuda

发明人： Teruhiko KUMADA ,  Hideharu Nobutoki ,  Naoki Yasuda

IPC分类号： B05D1/00

CPC分类号： H01L21/02274 ,  C23C16/30 ,  C23C16/342 ,  C23C16/511 ,  H01J37/32532 ,  H01L21/02112 ,  H01L21/02205 ,  H01L21/318

摘要： A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.

摘要翻译： 一种等离子体CVD装置，包括反应室，该反应室包括用于供给包含环硼氮烷骨架的化合物的入口，设置在反应室内的供电电极，用于支撑基板并施加负电荷;以及等离子体产生机构， 经由衬底到达馈电电极，用于在反应室内产生等离子体。 一种方法形成薄膜，其中通过使用包含环硼氮烷骨架的化合物作为原料形成薄膜，并且半导体器件包括通过诸如绝缘膜的方法形成的薄膜。 该装置和方法能够制造其中低介电常数和高机械强度长时间稳定地保持并且确保绝缘特性的薄膜。

公开(公告)号：US08467241B2

公开(公告)日：2013-06-18

申请号：US13246996

申请日：2011-09-28

申请人： Jun Fujiki ,  Kiwamu Sakuma ,  Naoki Yasuda ,  Yukio Nakabayashi ,  Masumi Saitoh

发明人： Jun Fujiki ,  Kiwamu Sakuma ,  Naoki Yasuda ,  Yukio Nakabayashi ,  Masumi Saitoh

IPC分类号： G11C11/34

CPC分类号： H01L29/792 ,  G11C16/0466 ,  H01L27/11568 ,  H01L29/4234

摘要： In a semiconductor layer, information is written by applying a first potential to a first electrode, applying a second potential that is lower than the first potential to all of back gate electrodes, applying a third potential that is higher than the first potential to the first to (i−1)th front gate electrodes, and applying a fourth potential that is between the second and third potentials to the ith and subsequent front gate electrodes, where “i” is a positive integer and identifies a specific location to which information is to be written.

摘要翻译： 在半导体层中，通过向第一电极施加第一电位，向所有背栅电极施加低于第一电位的第二电位，向第一电极施加高于第一电位的第三电位，写入信息 到（i-1）个前栅电极，并且将第二和第三电位之间的第四电位施加到第i个和后续的前栅电极，其中“i”是正整数，并且识别信息的特定位置 要写

公开(公告)号：US20130087845A1

公开(公告)日：2013-04-11

申请号：US13428185

申请日：2012-03-23

申请人： Naoki YASUDA

发明人： Naoki YASUDA

IPC分类号： H01L29/792 ,  H01L21/20

CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L29/7926

摘要： According to one embodiment, a method of manufacturing a nonvolatile semiconductor memory device is provided. In the method, a conductive film serving as a control gate is formed above a substrate. A hole extending through the conductive film from its upper surface to its lower surface is formed. A block insulating film, a charge storage layer, a tunnel insulating film, and a semiconductor layer are formed on the inner surface of the hole. A film containing a material having an oxygen dissociation catalytic action is formed on the semiconductor layer not to fill the hole. The interface between the tunnel insulating film and the semiconductor layer is oxidized through the film from the inside of the hole.

摘要翻译： 根据一个实施例，提供一种制造非易失性半导体存储器件的方法。 在该方法中，在基板上形成用作控制栅极的导电膜。 形成从其上表面到其下表面延伸穿过导电膜的孔。 在孔的内表面上形成块绝缘膜，电荷存储层，隧道绝缘膜和半导体层。 在不填充孔的半导体层上形成含有具有氧解离催化作用的材料的膜。 隧道绝缘膜与半导体层之间的界面从孔的内部通过膜氧化。

公开(公告)号：US08415736B2

公开(公告)日：2013-04-09

申请号：US13527813

申请日：2012-06-20

申请人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

发明人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/7881

摘要： A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.

公开(公告)号：US20130010535A1

公开(公告)日：2013-01-10

申请号：US13619223

申请日：2012-09-14

申请人： Masao SHINGU ,  Jun FUJIKI ,  Naoki YASUDA ,  Koichi MURAOKA

发明人： Masao SHINGU ,  Jun FUJIKI ,  Naoki YASUDA ,  Koichi MURAOKA

IPC分类号： H01L29/792 ,  G11C11/40

CPC分类号： H01L29/7883 ,  G11C11/40 ,  G11C16/0408 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/788 ,  H01L29/792

摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.