Invention Grant
- Patent Title: Semiconductor chip with through-silicon-via and sidewall pad
- Patent Title (中): 半导体芯片,带硅通孔和侧壁衬垫
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Application No.: US12273434Application Date: 2008-11-18
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Publication No.: US08674482B2Publication Date: 2014-03-18
- Inventor: Xunqing Shi , Bin Xie , Chang Hwa Chung
- Applicant: Xunqing Shi , Bin Xie , Chang Hwa Chung
- Applicant Address: HK Shatin, New Territories
- Assignee: Hong Kong Applied Science and Technology Research Institute Co. Ltd.
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Co. Ltd.
- Current Assignee Address: HK Shatin, New Territories
- Agency: Berkeley Law & Technology Group, LLP
- Main IPC: H01L29/40
- IPC: H01L29/40

Abstract:
Subject matter disclosed herein may relate to packaging for multi-chip semiconductor devices as may be used, for example, in flash memory devices. In an example embodiment, a semiconductor chip may comprise a through-silicon via and a sidewall pad.
Public/Granted literature
- US20100123241A1 SEMICONDUCTOR CHIP WITH THROUGH-SILICON-VIA AND SIDEWALL PAD Public/Granted day:2010-05-20
Information query
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