发明授权
- 专利标题： 3D integrated circuits structure
- 专利标题（中）： 3D集成电路结构
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申请号： US13364002申请日： 2012-02-01
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公开(公告)号： US08674515B2公开(公告)日： 2014-03-18
- 发明人: Mukta G. Farooq , Subramanian S. Iyer , Steven J. Koester , Huilong Zhu
- 申请人： Mukta G. Farooq , Subramanian S. Iyer , Steven J. Koester , Huilong Zhu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Parashos Kalaitzis; Ira D. Blecker
- 主分类号： H01L23/538
- IPC分类号： H01L23/538
摘要：
A structure of connecting at least two integrated circuits in a 3D arrangement by a metal-filled through silicon via which simultaneously connects a connection pad in a first integrated circuit and a connection pad in a second integrated circuit.
公开/授权文献
- US20120126425A1 3D INTEGRATED CIRCUITS STRUCTURE 公开/授权日：2012-05-24