发明授权
US08675390B2 System and method for MRAM having controlled averagable and isolatable voltage reference 有权
MRAM的系统和方法具有可控的可分离和可分离的电压参考

  • 专利标题: System and method for MRAM having controlled averagable and isolatable voltage reference
  • 专利标题(中): MRAM的系统和方法具有可控的可分离和可分离的电压参考
  • 申请号: US13278217
    申请日: 2011-10-21
  • 公开(公告)号: US08675390B2
    公开(公告)日: 2014-03-18
  • 发明人: Jung Pill KimTaehyun Kim
  • 申请人: Jung Pill KimTaehyun Kim
  • 申请人地址: US CA San Diego
  • 专利权人: QUALCOMM Incorporated
  • 当前专利权人: QUALCOMM Incorporated
  • 当前专利权人地址: US CA San Diego
  • 代理商 Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
  • 主分类号: G11C11/00
  • IPC分类号: G11C11/00
System and method for MRAM having controlled averagable and isolatable voltage reference
摘要:
A memory has a plurality of non-volatile resistive (NVR) memory arrays, each with an associated reference voltage generating circuit coupled by a reference circuit coupling link to a reference line, the reference coupled to a sense amplifier for that NVR memory array. Reference line coupling links couple the reference lines of different NVR memory arrays. Optionally, different ones of the reference coupling links are removed or opened, obtaining respective different average and isolated reference voltages on the different reference lines. Optionally, different ones of the reference circuit coupling links are removed or opened, obtaining respective different averaged voltages on the reference lines, and uncoupling and isolating different reference circuits.
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