公开(公告)号：US09293243B2

公开(公告)日：2016-03-22

申请号：US14380750

申请日：2012-10-18

申请人： Taehyun Kim ,  Kyoichi Ohtsuka ,  Tohru Kimura ,  Kazuki Takahashi

发明人： Taehyun Kim ,  Kyoichi Ohtsuka ,  Tohru Kimura ,  Kazuki Takahashi

IPC分类号： H01F7/122 ,  H01F7/16 ,  H01H33/666 ,  H01H3/28 ,  H01H33/38

CPC分类号： H01F7/122 ,  H01F7/1615 ,  H01F7/1623 ,  H01F7/1646 ,  H01H3/28 ,  H01H33/38 ,  H01H33/6662

摘要： An electromagnetic device includes: a fixed iron core; a movable iron core which is disposed to face the fixed iron core and which is displaceable in an axis line direction of the drive shaft; an electromagnetic coil; a permanent magnet which retains the movable iron core at the advanced position; supporting posts which are provided parallel to the axis line direction on both side surfaces of the fixed iron core and support the fixed iron core; an opening-side plate which is provided at one end portion of the supporting post; and a closing-side plate which is provided at the other end portion of the supporting post, wherein the advanced position of the movable iron core is restricted by the fixed iron core and the retreated position is restricted by the opening-side plate.

摘要翻译： 电磁装置包括：固定铁芯; 可动铁芯，其设置成与所述固定铁芯相对并且能够沿所述驱动轴的轴线方向移位; 电磁线圈; 将可动铁芯保持在前进位置的永磁体; 支撑柱，其在固定铁芯的两个侧表面上平行于轴线方向设置并支撑固定铁芯; 开口侧板，其设置在所述支撑柱的一个端部; 以及设置在所述支撑柱的另一端部的封闭侧板，其中，所述可动铁芯的前进位置被所述固定铁芯限制，并且所述后退位置被所述开口侧板限制。

公开(公告)号：US09147457B2

公开(公告)日：2015-09-29

申请号：US13613038

申请日：2012-09-13

申请人： Jung Pill Kim ,  Taehyun Kim ,  Sungryul Kim

发明人： Jung Pill Kim ,  Taehyun Kim ,  Sungryul Kim

IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C29/00

CPC分类号： G11C11/16 ,  G11C11/165 ,  G11C11/1673 ,  G11C29/787 ,  G11C29/832

摘要： In a magnetic random access memory (MRAM), numerous arrays of reference bit cells are coupled together by coupling their respective bit lines to a merged reference node. Pass gate circuitry coupled between the respective reference bit lines and the merged reference node is configured for selectively coupling or decoupling one or more of the reference bit lines to and from the merged reference node. The pass gate circuitry is controllable by programming one-time programmable devices coupled to the pass gate circuitry. The one-time programmable devices can be programmed to decouple flawed arrays of reference bit cells from the merged reference node or to select between redundant arrays of reference bit cells for coupling to the reference node.

摘要翻译： 在磁随机存取存储器（MRAM）中，参考位单元的多个阵列通过将它们各自的位线耦合到合并的参考节点而耦合在一起。 耦合在相应的参考位线和合并的参考节点之间的通过门电路被配置用于选择性地将一个或多个参考位线耦合或去耦合到合并的参考节点。 传递门电路可通过编程耦合到通路电路的一次可编程器件来控制。 一次性可编程器件可以被编程为将参考位单元的有缺陷的阵列与合并的参考节点去耦，或者在用于耦合到参考节点的参考位单元的冗余阵列之间进行选择。

公开(公告)号：US20140132373A1

公开(公告)日：2014-05-15

申请号：US14129807

申请日：2012-09-10

申请人： Kazuki Takahashi ,  Mitsuru Tsukima ,  Tomoko Tanabe ,  Taehyun Kim ,  Toru Kimura

发明人： Kazuki Takahashi ,  Mitsuru Tsukima ,  Tomoko Tanabe ,  Taehyun Kim ,  Toru Kimura

IPC分类号： H01H1/54

CPC分类号： H01H1/54 ,  H01F7/1615 ,  H01H33/6662 ,  H01H51/2227 ,  H01H71/32

摘要： An electromagnetically operated device includes: a moving member of the electromagnetically operated device; a drive coil that is energized to generate magnetic flux for driving the moving member; a permanent magnet provided between a stationary member and the moving member for holding the moving member; and a holding force adjusting member for adjusting the holding force applied to the moving member by the permanent magnet, wherein the holding force adjusting member is placed at a position that will not be included in the main magnetic path of the magnetic flux caused by the drive coil so as to be removable.

摘要翻译： 电磁操作装置包括：电磁操作装置的移动部件; 驱动线圈，其被通电以产生用于驱动所述移动部件的磁通量; 设置在静止构件和用于保持移动构件的移动构件之间的永磁体; 以及保持力调节构件，用于调节由永磁体施加到移动构件的保持力，其中保持力调节构件被放置在不包括在由驱动器引起的磁通量的主磁路中的位置 线圈，以便可拆卸。

公开(公告)号：US20140071738A1

公开(公告)日：2014-03-13

申请号：US13613038

申请日：2012-09-13

申请人： Jung Pill Kim ,  Taehyun Kim ,  Sungryul Kim

发明人： Jung Pill Kim ,  Taehyun Kim ,  Sungryul Kim

IPC分类号： G11C11/16

CPC分类号： G11C11/16 ,  G11C11/165 ,  G11C11/1673 ,  G11C29/787 ,  G11C29/832

摘要： In a magnetic random access memory (MRAM), numerous arrays of reference bit cells are coupled together by coupling their respective bit lines to a merged reference node. Pass gate circuitry coupled between the respective reference bit lines and the merged reference node is configured for selectively coupling or decoupling one or more of the reference bit lines to and from the merged reference node. The pass gate circuitry is controllable by programming one-time programmable devices coupled to the pass gate circuitry. The one-time programmable devices can be programmed to decouple flawed arrays of reference bit cells from the merged reference node or to select between redundant arrays of reference bit cells for coupling to the reference node.

摘要翻译： 在磁随机存取存储器（MRAM）中，参考位单元的多个阵列通过将它们各自的位线耦合到合并的参考节点而耦合在一起。 耦合在相应的参考位线和合并的参考节点之间的通过门电路被配置用于选择性地将一个或多个参考位线耦合或去耦合到合并的参考节点。 传递门电路可通过编程耦合到通路电路的一次可编程器件来控制。 一次性可编程器件可以被编程为将参考位单元的有缺陷的阵列与合并的参考节点去耦，或者在用于耦合到参考节点的参考位单元的冗余阵列之间进行选择。

公开(公告)号：US20140050019A1

公开(公告)日：2014-02-20

申请号：US13589315

申请日：2012-08-20

申请人： Kangho Lee ,  Taehyun Kim ,  Jung Pill Kim ,  Seung H. Kang

发明人： Kangho Lee ,  Taehyun Kim ,  Jung Pill Kim ,  Seung H. Kang

IPC分类号： G11C11/16 ,  H01L21/8239 ,  B05C11/00 ,  H01L43/12

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01L21/00

摘要： A Multi-Level Memory Cell (MLC) using multiple Magnetic Tunnel Junction (MTJ) structures having one or more layers with varying thickness is disclosed. The multiple MTJ structures, which are vertically stacked and arranged in series, may have substantially identical area dimensions to minimize fabrication costs because one mask can be used to pattern the multiple MTJ structures. Further, varying the thicknesses associated with the one or more layers may provide the multiple MTJ structures with different switching current densities and thereby increase memory density and improve read and write operations. In one embodiment, the layers with the varying thicknesses may include tunnel barriers or magnesium oxide layers associated with the multiple MTJ structures and/or free layers associated with the multiple MTJ structures.

摘要翻译： 公开了使用具有一层或多层具有变化厚度的多个磁隧道结（MTJ）结构的多层存储单元（MLC）。 垂直堆叠和串联布置的多个MTJ结构可以具有基本上相同的面积尺寸以最小化制造成本，因为可以使用一个掩模来对多个MTJ结构进行图案化。 此外，改变与一个或多个层相关联的厚度可以为多个MTJ结构提供不同的开关电流密度，从而增加存储器密度并改善读取和写入操作。 在一个实施例中，具有变化厚度的层可以包括与多个MTJ结构相关联的隧道势垒或氧化镁层，和/或与多个MTJ结构相关联的自由层。

公开(公告)号：US20130293286A1

公开(公告)日：2013-11-07

申请号：US13464242

申请日：2012-05-04

申请人： Xia Li ,  Jung Pill Kim ,  Taehyun Kim

发明人： Xia Li ,  Jung Pill Kim ,  Taehyun Kim

IPC分类号： G05F3/02 ,  H01L21/34

CPC分类号： G11C7/062 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/5642

摘要： A circuit includes a first reference pair that includes a first path and a second path. The first path includes a first magnetic tunnel junction (MTJ) element, and the second path includes a second MTJ element. The circuit further includes a second reference pair that includes a third path and a fourth path. The third path includes a third MTJ element, and the fourth path includes a fourth MTJ element. The first reference pair and the second reference pair are tied together in parallel. A reference resistance of the circuit is based on a resistance of each of the first, second, third, and fourth MTJ elements. The reference resistance of the circuit is adjustable by adjusting a resistance of one of the MTJ elements.

摘要翻译： 电路包括包括第一路径和第二路径的第一参考对。 第一路径包括第一磁隧道结（MTJ）元件，第二路径包括第二MTJ元件。 电路还包括第二参考对，其包括第三路径和第四路径。 第三路径包括第三MTJ元件，第四路径包括第四MTJ元件。 第一个参考对和第二个参考对并联在一起。 电路的参考电阻基于第一，第二，第三和第四MTJ元件中的每一个的电阻。 通过调整MTJ元件之一的电阻可以调节电路的参考电阻。

公开(公告)号：US08488363B2

公开(公告)日：2013-07-16

申请号：US12777468

申请日：2010-05-11

申请人： Hari M. Rao ,  Jung Pill Kim ,  Taehyun Kim ,  Xiaochun Zhu ,  Kangho Lee ,  Wuyang Hao

发明人： Hari M. Rao ,  Jung Pill Kim ,  Taehyun Kim ,  Xiaochun Zhu ,  Kangho Lee ,  Wuyang Hao

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/1693

摘要： A method writes data to a resistive memory, such as spin torque transfer magnetic random access memory (STT-MRAM). The method writes received bits of data to a memory cell array, in response to a first write signal. The method also reads stored data from the memory cell array, after the first write signal is generated, and then compares the stored data with the received bits of data to determine whether each of the received bits of data was written to the memory. In response to a second write signal, received bits of data determined not to have been written during the first write signal, are written.

摘要翻译： 一种方法将数据写入电阻性存储器，如自旋扭矩传递磁随机存取存储器（STT-MRAM）。 该方法响应于第一写入信号将接收到的数据位写入存储单元阵列。 该方法还在生成第一写信号之后从存储单元阵列中读取存储的数据，然后将所存储的数据与接收的数据位进行比较，以确定每个接收的数据位是否被写入存储器。 响应于第二写入信号，写入在第一写入信号期间被确定为不被写入的数据的接收位。

公开(公告)号：US20050173057A1

公开(公告)日：2005-08-11

申请号：US10928851

申请日：2004-08-27

申请人： Tadatomo Suga ,  Taehyun Kim ,  Tomoyuki Abe

发明人： Tadatomo Suga ,  Taehyun Kim ,  Tomoyuki Abe

IPC分类号： H01L21/02 ,  H01L21/18 ,  H01L21/20 ,  B32B31/00

CPC分类号： H01J37/321 ,  B32B38/0008 ,  B32B2310/08 ,  B32B2310/14 ,  B32B2457/14 ,  H01L21/187

摘要： A substrate bonding method for mutually bonding substrates, has a first radiation step for irradiating the surfaces of the individual substrates with an oxygen particle beam, a second radiation step for irradiating the surfaces of the individual substrate with a nitrogen particle beam simultaneously with or subsequently to the first radiation step, and a step for stacking the individual substrates and bringing the surfaces thereof into close contact. Particularly, the substrates which have been irradiated first with an oxygen plasma and subsequently with a nitrogen plasma are stacked and bonded.

摘要翻译： 用于相互接合基板的基板接合方法具有用氧粒子束照射各个基板的表面的第一辐射步骤，用于将氮化物颗粒束的表面与氮颗粒束的表面同时或随后地照射的第二辐射步骤 第一辐射步骤和用于堆叠各个基板并使其表面紧密接触的步骤。 特别地，首先用氧等离子体并随后用氮等离子体照射的基板被层叠并结合。

公开(公告)号：US20050130298A1

公开(公告)日：2005-06-16

申请号：US10857291

申请日：2004-05-28

申请人： Ye Sun Han ,  Hyewhon Rhim ,  Taehyun Kim ,  Sunoh Kim ,  Dae-sik Lim ,  Juhyun Choi

发明人： Ye Sun Han ,  Hyewhon Rhim ,  Taehyun Kim ,  Sunoh Kim ,  Dae-sik Lim ,  Juhyun Choi

IPC分类号： C12N5/22 ,  C07K14/705 ,  C12N5/06 ,  C12N5/16

CPC分类号： C07K14/705 ,  C12N2503/02

摘要： There is provided a cell line that is prepared by transforming HEK293 cell with a human Kir2.1 gene using a retrovirus expression system, wherein the HEK293 expresses a stable α1G T-type calcium channel. The cell line responds sensitively to KCl and forms an appropriate level of the membrane voltage so that the cell signaling pathway may be investigated by the molecular biological and biochemical studies.

摘要翻译： 提供了使用逆转录病毒表达系统通过用人Kir2.1基因转化HEK293细胞制备的细胞系，其中HEK293表达稳定的α1G/ T型钙通道。 细胞系对KCl敏感地反应，并形成适当水平的膜电压，从而可以通过分子生物学和生物化学研究来研究细胞信号通路。

公开(公告)号：US11367401B2

公开(公告)日：2022-06-21

申请号：US17283946

申请日：2019-11-21

申请人： Taehyun Kim

发明人： Taehyun Kim

IPC分类号： G09G3/3266

摘要： Disclosed is a method for driving a display, comprising the steps of: turning on one scan line from among a plurality of scan lines so as to drive a pixel connected to the scan line through a plurality of source lines; and turning off the scan line, and then turning on a scan line spaced apart from the scan line with at least one column there between, so as to drive a pixel connected to the scan line through a plurality of source lines.