Invention Grant
- Patent Title: Spin-transfer torque memory self-reference read method
- Patent Title (中): 自旋转矩存储器自参考读取方式
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Application No.: US13847135Application Date: 2013-03-19
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Publication No.: US08675401B2Publication Date: 2014-03-18
- Inventor: Hai Li , Yiran Chen , Hongyue Liu , Kang Yong Kim , Dimitar V. Dimitrov , Henry F. Huang
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.
Public/Granted literature
- US20130215674A1 SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD Public/Granted day:2013-08-22
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