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    Spin-transfer torque memory self-reference read method
    1.
    发明授权
    Spin-transfer torque memory self-reference read method 失效
    自旋转矩存储器自参考读取方式

    公开(公告)号：US08675401B2

    公开(公告)日：2014-03-18

    申请号：US13847135

    申请日：2013-03-19

    Applicant: Seagate Technology LLC

    Inventor： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    IPC: G11C11/00

    CPC classification number: G11C11/1673 ,  G11C7/06 ,  G11C7/065 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/5006 ,  Y10S977/933

    Abstract: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    Abstract translation: 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流，形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

    Data updating in non-volatile memory
    2.
    发明授权
    Data updating in non-volatile memory 有权

    公开(公告)号：US10684778B2

    公开(公告)日：2020-06-16

    申请号：US14846411

    申请日：2015-09-04

    Applicant: Seagate Technology LLC

    Inventor： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Yuan Yan ,  Harry Hongyue Liu

    IPC: G06F3/06 ,  G06F12/02

    Abstract: Various embodiments of the present invention are generally directed to an apparatus and associated method for updating data in a non-volatile memory array. In accordance with some embodiments, a memory block is formed with a plurality of types of memory cell sectors arranged in data pages of a first type and log pages of a second type that can be updated in-place. A first updated sector is written to a first log page while maintaining an outdated sector in an original data page, and overwritten with a second updated sector.

    Data Updating in Non-Volatile Memory
    3.
    发明申请
    Data Updating in Non-Volatile Memory 审中-公开
    非易失性存储器中的数据更新

    公开(公告)号：US20150378607A1

    公开(公告)日：2015-12-31

    申请号：US14846411

    申请日：2015-09-04

    Applicant: Seagate Technology LLC

    Inventor： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Yuan Yan ,  Harry Hongyue Liu

    IPC: G06F3/06

    CPC classification number: G06F3/061 ,  G06F3/0655 ,  G06F3/0688 ,  G06F12/0246 ,  G06F2212/2024 ,  G06F2212/205 ,  G06F2212/225 ,  G06F2212/7202 ,  Y02D10/13

    Abstract: Various embodiments of the present invention are generally directed to an apparatus and associated method for updating data in a non-volatile memory array. In accordance with some embodiments, a memory block is formed with a plurality of types of memory cell sectors arranged in data pages of a first type and log pages of a second type that can be updated in-place. A first updated sector is written to a first log page while maintaining an outdated sector in an original data page, and overwritten with a second updated sector.

    Abstract translation: 本发明的各种实施例通常涉及用于更新非易失性存储器阵列中的数据的装置和相关联的方法。 根据一些实施例，存储器块形成有布置在第一类型的数据页中的多种类型的存储器单元扇区和可以就地更新的第二类型的日志页。 将第一更新的扇区写入第一日志页面，同时保持原始数据页面中的过时扇区，并被第二更新扇区覆盖。

    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD
    5.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD 失效
    旋转转矩记忆自参考读取方法

    公开(公告)号：US20130215674A1

    公开(公告)日：2013-08-22

    申请号：US13847135

    申请日：2013-03-19

    Applicant: Seagate Technology LLC

    Inventor： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Kang Yong Kim ,  Dimitar V. Dimitrov ,  Henry F. Huang

    IPC: G11C11/16

    CPC classification number: G11C11/1673 ,  G11C7/06 ,  G11C7/065 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/5006 ,  Y10S977/933

    Abstract: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

    Abstract translation: 描述了自旋转移力矩存储装置和自参考读取方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 然后通过磁性隧道结数据单元施加低电阻状态的极化写入电流，形成低的第二电阻状态磁隧道结数据单元。 第二读取电流通过低的第二电阻状态磁隧道结数据单元施加以形成第二位线读取电压。 该方法还包括将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

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