发明授权
- 专利标题： Fine tuning highly resistive substrate resistivity and structures thereof
- 专利标题（中）： 微调高电阻衬底电阻率及其结构
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申请号： US13420637申请日： 2012-03-15
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公开(公告)号： US08679863B2公开(公告)日： 2014-03-25
- 发明人: Jeffrey P. Gambino , Derrick Liu , Dale W. Martin , Gerd Pfeiffer
- 申请人： Jeffrey P. Gambino , Derrick Liu , Dale W. Martin , Gerd Pfeiffer
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Methods are provided for fine tuning substrate resistivity. The method includes measuring a resistivity of a substrate after an annealing process, and fine tuning a subsequent annealing process to achieve a target resistivity of the substrate. The fine tuning is based on the measured resistivity.
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