Invention Grant
- Patent Title: Method of making thin-wafer current sensors
- Patent Title (中): 制造薄片电流传感器的方法
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Application No.: US13626456Application Date: 2012-09-25
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Publication No.: US08679895B2Publication Date: 2014-03-25
- Inventor: Mario Motz , Udo Ausserlechner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Patterson Thuente Pedersen, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/64

Abstract:
Embodiments relate to IC current sensors fabricated using thin-wafer manufacturing technologies. Such technologies can include processing in which dicing before grinding (DBG) is utilized, which can improve reliability and minimize stress effects. While embodiments utilize face-up mounting, face-down mounting is made possible in other embodiments by via through-contacts. IC current sensor embodiments can present many advantages while minimizing drawbacks often associated with conventional IC current sensors.
Public/Granted literature
- US20130029432A1 THIN-WAFER CURRENT SENSORS Public/Granted day:2013-01-31
Information query
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