发明授权
- 专利标题： Semiconductor light emitting device and method of fabricating semiconductor light emitting device
- 专利标题（中）： 半导体发光器件及半导体发光器件的制造方法
-
申请号： US12874568申请日： 2010-09-02
-
公开(公告)号： US08680548B2公开(公告)日： 2014-03-25
- 发明人: Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
- 申请人： Toru Gotoda , Hajime Nago , Toshiyuki Oka , Kotaro Zaima , Shinya Nunoue
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-052209 20100309
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element.
公开/授权文献
信息查询
IPC分类:
