发明授权
- 专利标题: Method and resulting capacitor structure for liquid crystal on silicon display devices
- 专利标题(中): 用于液晶显示器件的方法和电容器结构
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申请号: US13081471申请日: 2011-04-06
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公开(公告)号: US08681283B2公开(公告)日: 2014-03-25
- 发明人: Wei Min Li , Herb H. Huang
- 申请人: Wei Min Li , Herb H. Huang
- 申请人地址: CN Shanghai
- 专利权人: Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人: Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址: CN Shanghai
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 优先权: CN201010154836 20100416
- 主分类号: G02F1/1368
- IPC分类号: G02F1/1368
摘要:
A liquid crystal on silicon display device (LCOS) has a semiconductor substrate comprising a surface region and a gate dielectric layer overlying the surface region. The device also has a word line formed overlying the gate dielectric layer and a first source/drain region coupled to the word line. The device has a bottom electrode structure formed overlying an interlayer dielectric. A capacitor dielectric is formed overlying the bottom electrode. A top electrode structure is formed overlying the capacitor dielectric to form a capacitor structure including the bottom electrode structure, the capacitor dielectric, and the top electrode structure. The device has a mirror surface formed overlying the top electrode structure to form a pixel electrode structure and a liquid crystal material provided overlying the mirror surface. In an embodiment, the LCOS described above is in an integrated circuit chip that also includes a DRAM device.
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