Invention Grant
- Patent Title: Nonvolatile memory device and related method of programming
- Patent Title (中): 非易失存储器件及相关的编程方法
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Application No.: US13757960Application Date: 2013-02-04
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Publication No.: US08681543B2Publication Date: 2014-03-25
- Inventor: Joon-Suc Jang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0055397 20090622
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A method of programming a nonvolatile memory device comprises pre-programming multi-bit data in a plurality of multi-level memory cells, reading the pre-programmed multi-bit data from the plurality of multi-level cells based on state group codes indicating state groups of the plurality of multi-level cells, and re-programming the read multi-bit data to the plurality of multi-level cells.
Public/Granted literature
- US20130141974A1 NONVOLATILE MEMORY DEVICE AND RELATED METHOD OF PROGRAMMING Public/Granted day:2013-06-06
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