公开(公告)号：US10573389B2

公开(公告)日：2020-02-25

申请号：US16013988

申请日：2018-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan-Ha Kim ,  Suk-Eun Kang ,  Ji-Su Kim ,  Seung-Kyung Ro ,  Dong-Gi Lee ,  Yun-Jung Lee ,  Jin-Wook Lee ,  Hee-Won Lee ,  Joon-Suc Jang ,  Young-Ha Choi

IPC: G11C16/10 ,  G11C16/34 ,  G06K9/62 ,  G11C16/08 ,  G11C8/12 ,  G11C5/06

Abstract: An operating method of a storage device includes a controller: receiving read data from a non-volatile memory; measuring a plurality of threshold voltage distributions respectively corresponding to a plurality of memory units of the non-volatile memory, based on the received read data; measuring a distribution variation between the plurality of memory units, based on the measured plurality of threshold voltage distributions; dynamically determining operation parameters for the non-volatile memory, based on the measured distribution variation; and transmitting, to the non-volatile memory, an operate command, an address, and at least one operation parameter corresponding to the address.

公开(公告)号：US20130250680A1

公开(公告)日：2013-09-26

申请号：US13896141

申请日：2013-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Si-Hwan Kim ,  Joon-Suc Jang ,  Duck-Kyeun Woo

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3468

Abstract: To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.

Abstract translation: 为了对半导体存储器件进行编程，通过划分表示存储器单元状态的目标阈值电压来设置多个目标阈值电压组。 目标阈值电压组通过将多个编程电压施加到字线而基本上同时编程。 调整目标阈值电压组的程序结束时间。

公开(公告)号：US09921749B2

公开(公告)日：2018-03-20

申请号：US14743458

申请日：2015-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Ryun Kim ,  Joon-Suc Jang

IPC: G06F3/06 ,  G06F12/02 ,  G11C16/34 ,  G11C16/04 ,  G11C16/26 ,  G11C11/56

CPC classification number: G06F3/061 ,  G06F3/0653 ,  G06F3/0673 ,  G06F12/0246 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/34 ,  G11C16/349

Abstract: A method of operating a memory system, including a memory device, includes managing program order information of the memory device based on a program order stamp (POS) indicating a relative temporal relationship between program operations of a plurality of memory groups that are included in the memory device. The method includes generating a first mapping table that stores a read voltage offset and an upper POS corresponding to the read voltage offset, by using a plurality of voltage levels that are sequentially decreased or reduced, and generating a second mapping table that stores the read voltage offset and a lower POS corresponding to the read voltage offset, by using a plurality of voltage levels that are sequentially increased. A read voltage for performing a read operation on the memory device is variably determined based on the first and second mapping tables and the program order information.

公开(公告)号：US09852795B2

公开(公告)日：2017-12-26

申请号：US15272776

申请日：2016-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Ku Kang ,  Sang-Yong Yoon ,  Joon-Suc Jang

IPC: G11C16/08 ,  G11C16/04 ,  G11C16/24 ,  G11C16/26 ,  G11C16/34 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  G11C29/00 ,  G11C7/10 ,  G11C29/44

CPC classification number: G11C16/0466 ,  G11C7/1063 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3431 ,  G11C29/832 ,  G11C2029/4402 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: A method of operating a nonvolatile memory device includes performing a first memory operation on a first memory block of a plurality of memory blocks and a curing operation on a portion of the first memory block when a status signal indicates a ready state of the nonvolatile memory device during an interval equal to or greater than a reference interval after the first memory operation is completed. The nonvolatile memory device includes the plurality of memory blocks, each memory block including a plurality of vertical strings extending in a vertical direction with respect to a substrate.

公开(公告)号：US08681545B2

公开(公告)日：2014-03-25

申请号：US13896141

申请日：2013-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Si-Hwan Kim ,  Joon-Suc Jang ,  Duck-Kyeun Woo

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3468

Abstract: To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.

Abstract translation: 为了对半导体存储器件进行编程，通过划分表示存储器单元状态的目标阈值电压来设置多个目标阈值电压组。 目标阈值电压组通过将多个编程电压施加到字线而基本上同时编程。 调整目标阈值电压组的程序结束时间。

公开(公告)号：US08681543B2

公开(公告)日：2014-03-25

申请号：US13757960

申请日：2013-02-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-Suc Jang

IPC: G11C16/04

CPC classification number: G11C16/04 ,  G11C11/5628 ,  G11C16/0483 ,  G11C2211/5621

Abstract: A method of programming a nonvolatile memory device comprises pre-programming multi-bit data in a plurality of multi-level memory cells, reading the pre-programmed multi-bit data from the plurality of multi-level cells based on state group codes indicating state groups of the plurality of multi-level cells, and re-programming the read multi-bit data to the plurality of multi-level cells.

Abstract translation: 一种对非易失性存储器件进行编程的方法包括：在多个多级存储器单元中预编程多位数据，基于指示状态的状态组代码从多个多电平单元读取预编程的多位数据 多个多电平单元的组，并且将读取的多位数据重新编程到多个多电平单元。