Invention Grant
- Patent Title: Liquid processing apparatus for substrate and liquid processing method
- Patent Title (中): 液体处理装置及液体处理方法
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Application No.: US12849357Application Date: 2010-08-03
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Publication No.: US08684014B2Publication Date: 2014-04-01
- Inventor: Yoshifumi Amano , Tsuyoshi Mizuno
- Applicant: Yoshifumi Amano , Tsuyoshi Mizuno
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: JP2009-184891 20090807; JP2010-122999 20100528
- Main IPC: B08B3/04
- IPC: B08B3/04

Abstract:
Disclosed is a liquid processing apparatus and a liquid processing method, which can process an entire wafer at a sufficiently high temperature and can sufficiently suppress adhesion of particles on a surface of the wafer, when the peripheral portion of the wafer is processed. The liquid processing apparatus includes a holding part to hold the substrate, a rotation driving part to rotate the holding part, and a shield unit. The shield unit includes an opposed plate opposed to the substrate held by the holding part, a heating part to heat the substrate through the opposed plate, and a heated gas supplying part to supply heated gas to a surface of the substrate held by the holding part.
Public/Granted literature
- US20110030737A1 LIQUID PROCESSING APPARATUS FOR SUBSTRATE AND LIQUID PROCESSING METHOD Public/Granted day:2011-02-10
Information query
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