发明授权
- 专利标题: Radiation source, lithographic apparatus and device manufacturing method
- 专利标题(中): 辐射源,光刻设备和器件制造方法
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申请号: US13058788申请日: 2009-07-13
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公开(公告)号: US08685632B2公开(公告)日: 2014-04-01
- 发明人: Antonius Theodorus Wilhelmus Kempen , Vadim Yevgenyevich Banine , Vladimir Vitalevich Ivanov , Erik Roelof Loopstra
- 申请人: Antonius Theodorus Wilhelmus Kempen , Vadim Yevgenyevich Banine , Vladimir Vitalevich Ivanov , Erik Roelof Loopstra
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 国际申请: PCT/EP2009/058898 WO 20090713
- 国际公布: WO2010/018039 WO 20100218
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G21K1/00
摘要:
A lithographic apparatus includes a source configured to generate a radiation beam comprising desired radiation and undesired radiation using a plasma, an illumination system configured to condition the radiation beam and to receive hydrogen gas during operation of the lithographic apparatus, and a support structure constructed to hold a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. A substrate table is constructed to hold a substrate, and a projection system is configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus is configured such that the radiation beam on entering the projection system includes at least 50% of the undesired radiation that is generated by the plasma and includes wavelengths of radiation that interact with the hydrogen gas to generate hydrogen radicals.
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