发明授权
- 专利标题： Nanowire tunneling field effect transistor with vertical structure and a manufacturing method thereof
- 专利标题（中）： 具有垂直结构的纳米线隧道场效应晶体管及其制造方法
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申请号： US13528398申请日： 2012-06-20
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公开(公告)号： US08685788B2公开(公告)日： 2014-04-01
- 发明人: Weining Bao , Chengwei Cao , Pengfei Wang , Wei Zhang
- 申请人： Weining Bao , Chengwei Cao , Pengfei Wang , Wei Zhang
- 申请人地址： CN Shanghai
- 专利权人： Fudan University
- 当前专利权人： Fudan University
- 当前专利权人地址： CN Shanghai
- 代理机构： Merchant & Gould P.C.
- 优先权： CN201110309367 20111013
- 主分类号： H01L21/16
- IPC分类号： H01L21/16
摘要：
The present invention belongs to the technical field of semiconductor devices and specifically relates to a method for manufacturing a nanowire tunneling field effect transistor (TFET). In the method, the ZnO nanowire required is developed in a water bath without the need for high temperatures and high pressure, featuring a simple solution preparation, convenient development and low cost, as well as constituting MOS devices of vertical structure with nanowire directly, thus omitting the nanowire treatment in the subsequent stage. The present invention has the advantages of simple structure, convenient manufacturing, and low cost, and control of the nanowire channel developed and the MOSFET array with vertical structure made of it though the gate, so as to facilitate the manufacturing of large-scale MOSFET array directly.
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