发明授权
- 专利标题： Manufacturing method of silicon carbide semiconductor device
- 专利标题（中）： 碳化硅半导体器件的制造方法
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申请号： US13355710申请日： 2012-01-23
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公开(公告)号： US08685848B2公开(公告)日： 2014-04-01
- 发明人: Yoshinori Matsuno , Yoichiro Tarui
- 申请人： Yoshinori Matsuno , Yoichiro Tarui
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-118661 20110527
- 主分类号： H01L21/329
- IPC分类号： H01L21/329
摘要：
A silicon oxide film is formed on an epitaxial layer by dry thermal oxidation, an ohmic electrode is formed on a back surface of a SiC substrate, an ohmic junction is formed between the ohmic electrode and the back surface of the SiC substrate by annealing the SiC substrate, the silicon oxide film is removed, and a Schottky electrode is formed on the epitaxial layer. Then, a sintering treatment is performed to form a Schottky junction between the Schottky electrode and the epitaxial layer.
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