Method of forming patterns of semiconductor device

Invention Grant

US08685865B2 Method of forming patterns of semiconductor device 有权

Title translation: 形成半导体器件图案的方法

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Patent Title: Method of forming patterns of semiconductor device
Patent Title (中): 形成半导体器件图案的方法
Application No.: US13608403

Application Date: 2012-09-10
Publication No.: US08685865B2

Publication Date: 2014-04-01
Inventor: Jeong-ju Park , Kyoung-mi Kim , Min-jung Kim , Dong-jun Lee , Boo-deuk Kim
Applicant: Jeong-ju Park , Kyoung-mi Kim , Min-jung Kim , Dong-jun Lee , Boo-deuk Kim
Applicant Address: KR Suwon-si, Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Suwon-si, Gyeonggi-do
Agency: Lee & Morse, P.C.
Priority: KR10-2011-0103601 20111011
Main IPC: H01L21/32
IPC: H01L21/32 ; G03F7/20

Method of forming patterns of semiconductor device

Abstract:

A method of forming patterns of a semiconductor device may include forming a photoresist layer that includes a photo acid generator (PAG) and a photo base generator (PBG), generating an acid from the PAG in a first exposed portion of the photoresist layer by first-exposing the photoresist layer, and generating a base from the PBG in a second exposed portion of the photoresist layer by second-exposing a part of the first exposed portion and neutralizing the acid. The method may also include baking the photoresist layer after the first and second-exposing and deblocking the photoresist layer of the first exposed portion in which the acid is generated to form a deblocked photoresist layer, and forming a photoresist pattern by removing the deblocked photoresist layer by using a developer.

Abstract(Chinese):

形成半导体器件的图案的方法可以包括形成光致抗蚀剂层，该光致抗蚀剂层包括光酸产生剂（PAG）和光产生剂（PBG），首先在光致抗蚀剂层的第一暴露部分中从PAG产生酸并且在所述光致抗蚀剂层的第二暴露部分中通过将所述第一暴露部分的一部分暴露并中和所述酸而从所述PBG生成碱。该方法还可以包括在第一和第二次曝光和去除其中产生酸的第一暴露部分的光致抗蚀剂层以形成解封的光致抗蚀剂层之后烘烤光致抗蚀剂层，以及通过去除去封闭的光刻胶层形成光致抗蚀剂图案通过使用开发人员。

Public/Granted literature

US20130089986A1 METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICE Public/Granted day:2013-04-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/32	......应用掩膜的