- 专利标题: Semiconductor device having oxide semiconductor transistor
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申请号: US12894911申请日: 2010-09-30
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公开(公告)号: US08686413B2公开(公告)日: 2014-04-01
- 发明人: Shunpei Yamazaki , Kei Takahashi , Yoshiaki Ito
- 申请人: Shunpei Yamazaki , Kei Takahashi , Yoshiaki Ito
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2009-235604 20091009
- 主分类号: H01L29/12
- IPC分类号: H01L29/12 ; H01L29/04 ; H01L31/036
摘要:
It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.
公开/授权文献
- US09006728B2 Semiconductor device having oxide semiconductor transistor 公开/授权日:2015-04-14