Invention Grant
- Patent Title: Power light emitting diode and method with current density operation
- Patent Title (中): 电力发光二极管和电流密度运算方法
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Application No.: US13931359Application Date: 2013-06-28
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Publication No.: US08686458B2Publication Date: 2014-04-01
- Inventor: Michael R. Krames , Mark P. D'Evelyn , James W. Raring , Thomas M. Katona
- Applicant: Soraa, Inc.
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend and Stockton LLP
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H05B37/02
Abstract:
A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.
Public/Granted literature
- US20140021883A1 POWER LIGHT EMITTING DIODE AND METHOD WITH CURRENT DENSITY OPERATION Public/Granted day:2014-01-23
Information query
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