Invention Grant
- Patent Title: Schottky diode integrated into LDMOS
- Patent Title (中): 集成到LDMOS中的肖特基二极管
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Application No.: US14015029Application Date: 2013-08-30
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Publication No.: US08686502B2Publication Date: 2014-04-01
- Inventor: Venkat Raghavan , Andrew D. Strachan
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by substituting one or more n+ source regions with Schottky diodes.
Public/Granted literature
- US20130341705A1 SCHOTTKY DIODE INTEGRATED INTO LDMOS Public/Granted day:2013-12-26
Information query
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