公开(公告)号：US08686502B2

公开(公告)日：2014-04-01

申请号：US14015029

申请日：2013-08-30

Applicant: Texas Instruments Incorporated

Inventor： Venkat Raghavan ,  Andrew D. Strachan

IPC: H01L27/06

CPC classification number: H01L27/06 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/782

Abstract: In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by substituting one or more n+ source regions with Schottky diodes.

Abstract translation: 在LDMOS器件中，通过用肖特基二极管代替一个或多个n +源极区，将肖特基二极管集成到LDMOS中来调节泄漏和正向传导参数。

公开(公告)号：US20130341705A1

公开(公告)日：2013-12-26

申请号：US14015029

申请日：2013-08-30

Applicant: Texas Instruments Incorporated

Inventor： Venkat Raghavan ,  Andrew D. Strachan

IPC: H01L27/06 ,  H01L29/66

CPC classification number: H01L27/06 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/782

Abstract: In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by substituting one or more n+ source regions with Schottky diodes.

Abstract translation: 在LDMOS器件中，通过用肖特基二极管代替一个或多个n +源极区，将肖特基二极管集成到LDMOS中来调节泄漏和正向传导参数。