An ESD protection element may include: a fin structure including a first connection region having a first conductivity type, a second connection region having a second conductivity type, first and second body regions formed between the connection regions, the first body region having the second conductivity type and formed adjacent to the first connection region, the second body region having the first conductivity type and formed adjacent to the second connection region, the body regions having a lower dopant concentration than the connection regions, a diffusion region formed between the body regions and having substantially the same dopant concentration as at least one of the first and second connection regions; a gate region on or above the first body region or the second body region; a gate control device electrically coupled to the gate region and configured to control at least one electrical potential applied to the gate region.