公开(公告)号：US20170033046A1

公开(公告)日：2017-02-02

申请号：US15294027

申请日：2016-10-14

Applicant: Infineon Technologies AG

Inventor： Christian Russ ,  Gunther Lehmann ,  Franz Ungar

IPC: H01L23/525

CPC classification number: H01L23/5256 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrical device with a fin structure, a first section of the fin structure having a first width and a first height, a second section of the fin structure having a second width and a second height, wherein the first width is smaller than the second width and the first height is lower than the second height.

Abstract translation: 一种具有翅片结构的电气装置，翅片结构的第一部分具有第一宽度和第一高度，翅片结构的第二部分具有第二宽度和第二高度，其中第一宽度小于第二宽度 并且第一高度低于第二高度。

公开(公告)号：US20150103452A1

公开(公告)日：2015-04-16

申请号：US14574955

申请日：2014-12-18

Applicant: Infineon Technologies AG

Inventor： Christian Russ ,  Werner Hoellinger ,  Bernhard Stein

IPC: H02H9/04

CPC classification number: H02H9/046

Abstract: Various embodiments described below relate to an ESD protection device that includes a voltage controlled shunt (e.g., a transistor) to selectively shunt energy of an incoming ESD pulse away from a circuit that includes a semiconductor device to be protected. In some embodiments, the ESD protection device includes a power up detection element to determine whether the circuit has powered up. If the circuit is powered up, the power up detection element prevents inadvertent triggering of the ESD protection device.

Abstract translation: 下面描述的各种实施例涉及ESD保护装置，其包括电压控制分流器（例如，晶体管），以便选择性地将输入的ESD脉冲的能量远离包括待保护的半导体器件的电路分流。 在一些实施例中，ESD保护装置包括用于确定电路是否通电的上电检测元件。 如果电路通电，则上电检测元件可防止ESD保护器件的意外触发。

公开(公告)号：US20130240992A1

公开(公告)日：2013-09-19

申请号：US13891221

申请日：2013-05-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Harald Gossner ,  Christian Russ

IPC: H01L23/60

CPC classification number: H01L23/60 ,  H01L27/0262 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/7436 ,  H01L29/749 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An ESD protection element may include: a fin structure including a first connection region having a first conductivity type, a second connection region having a second conductivity type, first and second body regions formed between the connection regions, the first body region having the second conductivity type and formed adjacent to the first connection region, the second body region having the first conductivity type and formed adjacent to the second connection region, the body regions having a lower dopant concentration than the connection regions, a diffusion region formed between the body regions and having substantially the same dopant concentration as at least one of the first and second connection regions; a gate region on or above the first body region or the second body region; a gate control device electrically coupled to the gate region and configured to control at least one electrical potential applied to the gate region.

Abstract translation: ESD保护元件可以包括：翅片结构，其包括具有第一导电类型的第一连接区域，具有第二导电类型的第二连接区域，形成在连接区域之间的第一和第二主体区域，具有第二导电性的第一体区域 并且与第一连接区域相邻地形成，第二主体区域具有第一导电类型并且与第二连接区域相邻地形成，具有比连接区域低的掺杂剂浓度的体区域，形成在体区域之间的扩散区域和 具有与所述第一和第二连接区域中的至少一个基本上相同的掺杂剂浓度; 第一体区域或第二体区域上方的栅极区域; 门控制装置，其电耦合到栅极区域并且被配置为控制施加到栅极区域的至少一个电势。

公开(公告)号：US08531807B2

公开(公告)日：2013-09-10

申请号：US13676748

申请日：2012-11-14

Applicant: Infineon Technologies AG

Inventor： Wolfgang Soldner ,  Gernot Langguth ,  Christian Russ ,  Harald Gossner

IPC: H02H9/00 ,  H02H1/00 ,  H02H1/04 ,  H02H3/22 ,  H02H9/06

CPC classification number: H02H9/046 ,  H01L23/60 ,  H01L2924/0002 ,  H03K17/08122 ,  H01L2924/00

Abstract: Embodiments of this disclosure relate to electrostatic discharge (ESD) protection techniques. For example, some embodiments include a variable resistor that selectively shunts power of an incoming ESD pulse from a first circuit node to a second circuit node and away from a semiconductor device. A control voltage provided to the variable resistor causes the transistor to change between a fully-off mode where only sub-threshold current, if any, flows; a fully-on mode wherein a maximum amount of current flows; and an analog mode wherein an intermediate and time-varying amount of current flows. In particular, the analog mode allows the ESD protection device to shunt power more precisely than previously achievable, such that the ESD protection device can protect semiconductor devices from ESD pulses.

Abstract translation: 本公开的实施例涉及静电放电（ESD）保护技术。 例如，一些实施例包括可变电阻器，其选择性地将来自第一电路节点的输入ESD脉冲的功率分流到第二电路节点并远离半导体器件。 提供给可变电阻器的控制电压使得晶体管在只有亚阈值电流（如果有的话）流动的完全关闭模式之间改变; 其中最大量的电流流动的完全启动模式; 以及其中中间和时变量的电流流动的模拟模式。 特别地，模拟模式允许ESD保护装置比先前可实现的更精确地分流功率，使得ESD保护装置可以保护半导体器件免受ESD脉冲。

公开(公告)号：US08686510B2

公开(公告)日：2014-04-01

申请号：US13891221

申请日：2013-05-10

Applicant: Infineon Technologies AG

Inventor： Harald Gossner ,  Christian Russ

IPC: H01L29/78

CPC classification number: H01L23/60 ,  H01L27/0262 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/7436 ,  H01L29/749 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An ESD protection element may include: a fin structure including a first connection region having a first conductivity type, a second connection region having a second conductivity type, first and second body regions formed between the connection regions, the first body region having the second conductivity type and formed adjacent to the first connection region, the second body region having the first conductivity type and formed adjacent to the second connection region, the body regions having a lower dopant concentration than the connection regions, a diffusion region formed between the body regions and having substantially the same dopant concentration as at least one of the first and second connection regions; a gate region on or above the first body region or the second body region; a gate control device electrically coupled to the gate region and configured to control at least one electrical potential applied to the gate region.

Abstract translation: ESD保护元件可以包括：翅片结构，其包括具有第一导电类型的第一连接区域，具有第二导电类型的第二连接区域，形成在连接区域之间的第一和第二主体区域，具有第二导电性的第一体区域 并且与第一连接区域相邻地形成，第二主体区域具有第一导电类型并且与第二连接区域相邻地形成，具有比连接区域低的掺杂剂浓度的体区域，形成在体区域之间的扩散区域和 具有与所述第一和第二连接区域中的至少一个基本上相同的掺杂剂浓度; 第一体区域或第二体区域上方的栅极区域; 门控制装置，其电耦合到栅极区域并且被配置为控制施加到栅极区域的至少一个电势。

公开(公告)号：US20130077197A1

公开(公告)日：2013-03-28

申请号：US13676748

申请日：2012-11-14

Applicant: Infineon Technologies AG

Inventor： Wolfgang Soldner ,  Gernot Langguth ,  Christian Russ ,  Harald Gossner

IPC: H02H9/04

CPC classification number: H02H9/046 ,  H01L23/60 ,  H01L2924/0002 ,  H03K17/08122 ,  H01L2924/00

Abstract: Embodiments of this disclosure relate to electrostatic discharge (ESD) protection techniques. For example, some embodiments include a variable resistor that selectively shunts power of an incoming ESD pulse from a first circuit node to a second circuit node and away from a semiconductor device. A control voltage provided to the variable resistor causes the transistor to change between a fully-off mode where only sub-threshold current, if any, flows; a fully-on mode wherein a maximum amount of current flows; and an analog mode wherein an intermediate and time-varying amount of current flows. In particular, the analog mode allows the ESD protection device to shunt power more precisely than previously achievable, such that the ESD protection device can protect semiconductor devices from ESD pulses.

Abstract translation: 本公开的实施例涉及静电放电（ESD）保护技术。 例如，一些实施例包括可变电阻器，其选择性地将来自第一电路节点的输入ESD脉冲的功率分流到第二电路节点并远离半导体器件。 提供给可变电阻器的控制电压使得晶体管在只有亚阈值电流（如果有的话）流动的完全关闭模式之间改变; 其中最大量的电流流动的完全启动模式; 以及其中中间和时变量的电流流动的模拟模式。 特别地，模拟模式允许ESD保护装置比先前可实现的更精确地分流功率，使得ESD保护装置可以保护半导体器件免受ESD脉冲。