Invention Grant
- Patent Title: Porous Si as CMOS image sensor ARC layer
- Patent Title (中): 多孔Si作为CMOS图像传感器ARC层
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Application No.: US13556932Application Date: 2012-07-24
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Publication No.: US08686527B2Publication Date: 2014-04-01
- Inventor: Shyh-Fann Ting , Yen-Ting Chiang , Ching-Chun Wang
- Applicant: Shyh-Fann Ting , Yen-Ting Chiang , Ching-Chun Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L31/0232
- IPC: H01L31/0232
Abstract:
A semiconductor device is provided. The semiconductor device includes metallization layers supported by a substrate, a diode and a partially doped silicon layer disposed over the metallization layers, a buffer layer disposed over the diode and the partially doped silicon layer; and an anti-reflective coating disposed over the buffer layer, the anti-reflective coating formed from a porous silicon.
Public/Granted literature
- US20130341746A1 Porous Si As CMOS Image Sensor ARC Layer Public/Granted day:2013-12-26
Information query
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