Invention Grant
- Patent Title: Trench isolation structure and method for forming the same
- Patent Title (中): 沟槽隔离结构及其形成方法
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Application No.: US13145301Application Date: 2011-04-22
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Publication No.: US08686534B2Publication Date: 2014-04-01
- Inventor: Huicai Zhong , Chao Zhao , Qingqing Liang
- Applicant: Huicai Zhong , Chao Zhao , Qingqing Liang
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201010557395 20101123
- International Application: PCT/CN2011/073180 WO 20110422
- International Announcement: WO2012/068825 WO 20120531
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/76
Abstract:
A trench isolation structure and a method of forming the same are provided. The trench isolation structure includes: a semiconductor substrate, and trenches formed in the semiconductor substrate and filled with a dielectric layer, where the material of the dielectric layer is a crystalline material. By using the present invention, the size of the divot can be reduced, and device performances can be improved.
Public/Granted literature
- US20130228893A1 TRENCH ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2013-09-05
Information query
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