发明授权
- 专利标题: Method for forming integrated circuit assembly
- 专利标题(中): 集成电路组件的形成方法
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申请号: US12490804申请日: 2009-06-24
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公开(公告)号: US08689437B2公开(公告)日: 2014-04-08
- 发明人: Bing Dang , David Hirsch Danovitch , Mario John Interrante , John Ulrich Knickerbocker , Michael Jay Shapiro , Van Thanh Truong
- 申请人: Bing Dang , David Hirsch Danovitch , Mario John Interrante , John Ulrich Knickerbocker , Michael Jay Shapiro , Van Thanh Truong
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Ryan, Mason & Lewis, LLP
- 代理商 Daniel P. Morris
- 主分类号: H01R9/00
- IPC分类号: H01R9/00 ; H05K3/00
摘要:
A method for forming an integrated circuit assembly comprises forming first solder bumps on a first die, and forming a first structure comprising the first die, the first solder bumps, a first flux, and a first substratum. The first die is placed upon the first substratum. The first solder bumps are between the first die and the first substratum. The first flux holds the first die substantially flat and onto the first substratum.
公开/授权文献
- US20100326702A1 INTEGRATED CIRCUIT ASSEMBLY 公开/授权日:2010-12-30
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