Invention Grant
- Patent Title: Surface profile adjustment using gas cluster ion beam processing
- Patent Title (中): 使用气体簇离子束处理进行表面轮廓调整
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Application No.: US13678972Application Date: 2012-11-16
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Publication No.: US08691103B2Publication Date: 2014-04-08
- Inventor: John J. Hautala
- Applicant: TEL Epion Inc.
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Agency: Wood, Herron & Evans, LLP
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
Abstract:
A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.
Public/Granted literature
- US20130075366A1 SURFACE PROFILE ADJUSTMENT USING GAS CLUSTER ION BEAM PROCESSING Public/Granted day:2013-03-28
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