Invention Grant
- Patent Title: Gas cluster ion beam etch profile control using beam divergence
- Patent Title (中): 使用光束发散的气体簇离子束蚀刻轮廓控制
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Application No.: US13223977Application Date: 2011-09-01
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Publication No.: US08691700B2Publication Date: 2014-04-08
- Inventor: John J. Hautala , Michael Graf
- Applicant: John J. Hautala , Michael Graf
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method of etching a substrate is described. In one embodiment, the method includes preparing a mask layer having a pattern formed therein on or above at least a portion of a substrate, etching a feature pattern into the substrate from the pattern in the mask layer using a gas cluster ion beam (GCIB), and controlling a sidewall profile of the feature pattern etched into the substrate by adjusting a beam divergence of the GCIB.
Public/Granted literature
- US20130059449A1 GAS CLUSTER ION BEAM ETCH PROFILE CONTROL USING BEAM DIVERGENCE Public/Granted day:2013-03-07
Information query
IPC分类:
