Invention Grant
US08691707B2 Voltage switchable dielectric for die-level electrostatic discharge (ESD) protection 有权
用于芯片级静电放电(ESD)保护的电压可切换电介质

  • Patent Title: Voltage switchable dielectric for die-level electrostatic discharge (ESD) protection
  • Patent Title (中): 用于芯片级静电放电(ESD)保护的电压可切换电介质
  • Application No.: US13956703
    Application Date: 2013-08-01
  • Publication No.: US08691707B2
    Publication Date: 2014-04-08
  • Inventor: Shiqun GuRatibor RadojcicYiming Li
  • Applicant: QUALCOMM Incorporated
  • Applicant Address: US CA San Diego
  • Assignee: QUALCOMM Incorporated
  • Current Assignee: QUALCOMM Incorporated
  • Current Assignee Address: US CA San Diego
  • Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
  • Main IPC: H01L21/31
  • IPC: H01L21/31
Voltage switchable dielectric for die-level electrostatic discharge (ESD) protection
Abstract:
A voltage-switchable dielectric layer may be employed on a die for electrostatic discharge (ESD) protection. The voltage-switchable dielectric layer functions as a dielectric layer between terminals of the die during normal operation of the die. When ESD events occur at the terminals of the die, a high voltage between the terminals switches the voltage-switchable dielectric layer into a conducting layer to allow current to discharge to a ground terminal of the die without the current passing through circuitry of the die. Thus, damage to the circuitry of the die is reduced or prevented during ESD events on dies with the voltage-switchable dielectric layer. The voltage-switchable dielectric layer may be deposited on the back side of a die for protection during stacking with a second die to form a stacked IC. A method includes depositing a voltage-switchable dielectric layer on a first die between a first terminal and a second terminal.
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