发明授权
US08692111B2 High throughput laser ablation processes and structures for forming contact holes in solar cells
有权
用于在太阳能电池中形成接触孔的高通量激光烧蚀工艺和结构
- 专利标题: High throughput laser ablation processes and structures for forming contact holes in solar cells
- 专利标题(中): 用于在太阳能电池中形成接触孔的高通量激光烧蚀工艺和结构
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申请号: US13298136申请日: 2011-11-16
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公开(公告)号: US08692111B2公开(公告)日: 2014-04-08
- 发明人: Taeseok Kim , Gabriel Harley , David D. Smith , Peter John Cousins
- 申请人: Taeseok Kim , Gabriel Harley , David D. Smith , Peter John Cousins
- 申请人地址: US CA San Jose
- 专利权人: SunPower Corporation
- 当前专利权人: SunPower Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Okamoto & Benedictor LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L31/00
摘要:
Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Throughput of the solar cell ablation process is improved by incorporating linear base diffusion regions with narrow width, for example as compared to an overlying metal contact. Throughput of the solar cell ablation process may also be improved by having contact holes to base diffusion regions that are perpendicular to contact holes to emitter diffusion regions. To allow for continuous laser scanning, a laser blocking layer may be located over an interlayer dielectric to prevent contact hole formation on certain regions, such as regions where a metal contact of one polarity may electrically shunt to a diffusion region of opposite polarity. In a hybrid design, a solar cell may have both linear and dotted base diffusion regions. An electro-optical modulator may be employed to allow for continuous laser scanning in dotted base diffusion designs.
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